PART |
Description |
Maker |
BCM6420 BCM6420IPB BCM6410IPB BCM6410 |
LOW POWER HIGH DENSITY CENTRAL OFFICE ADSL SOLUTION
|
BOARDCOM[Broadcom Corporation.]
|
BCM6420 BCM6410 BCM6410_04 BCM641004 |
LOW-POWER, HIGH-DENSITY CENTRAL OFFICE ADSL SOLUTION
|
BOARDCOM[Broadcom Corporation.]
|
M29W640D M29DW323 |
Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 16-SOIC FLASH NOR HIGH DENSITY & CONSUMER
|
ST Microelectronics 意法半导 STMicroelectronics
|
SD18-100 SD18-101 SD10-1R0 SD10-1R5 SD52-6R8 SD10- |
High Power Density, Low Profile, Shielded Inductors
|
List of Unclassifed Manufacturers ETC[ETC]
|
SD12-XXX |
(SD Series) High Power Density / Low Profile / Shielded Inductors
|
Cooper Electronic Technologies
|
FX5545G202 |
Industry Smallest and Low Profile 3W DC/DC Boost Converter with High Output Density Power
|
Vishay
|
ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10 |
3.3V In-System Programmable High Density SuperFAST?PLD 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44 CRYSTAL 16.0 MHZ 20PF SMD EE PLD, 13 ns, PQFP100 CRYSTAL 20.0 MHZ 20PF SMD RES 180K-OHM 1% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM 3.3V In-System Programmable High Density SuperFAST PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 280 MHz 3.3V in-system prommable superFAST high density PLD
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
FX5545G305 |
LP5951 Micropower, 150mA Low-Dropout CMOS Voltage Regulator; Package: SOT-23; No of Pins: 5 Industry Smallest and Low Profile 10W 3.0A DC/DC Buck Converter with High Output Power Density
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
FX5545G1052V7T2 FX5545G105 FX5545G1052V7B1 FX5545G |
Industry Smallest and Low Profile 6.5W 2.0A DC/DC Buck Converter with High Output Power Density From old datasheet system
|
VISAY[Vishay Siliconix]
|
MVAC250-24AFD MVAC-COVER |
250W 3 x 5 High Density AC-DC Power Supply Converter 250 Watt Silicon Type Metal Package Power Transistor 250W 3 x 5 High Density AC-DC Power Supply Converter
|
Murata Power Solutions ...
|
SET111411 SET111403 SET111412 SET111419 SET111404 |
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?400V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??) High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?1000V,娓╁害55???骞冲??存??垫?30A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??) 3 PHASE, 30 A, SILICON, BRIDGE RECTIFIER DIODE High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?150V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴??涓???ㄦ尝妗ユ?娴??) High Density,High Current,3-Phase Full Wave Bridge Rectifier(反向电压1000V,温度55℃时平均整流电流45A,高密大电三相全波桥整流器) 高密度,大电3 -相全波桥式整流器(反向电000V的温5℃时平均整流电流45A条,高密度,大电流,三相全波桥整流器 HIGH CURRENT, 3-PHASE FULL WAVE BRIDGE ASSEMBLY
|
Semtech, Corp. Semtech Corporation
|